华体汇视讯

姓 名: 崔江维
性 别:
职 务:
职 称: 研究员(自然科学)
通讯地址: 华体汇视讯乌鲁木齐市新市区科学二街181号
邮政编码: 830011
电子邮件: cuijw@ms.xjb.ac.cn

简历:

2019/11-至今 华体汇视讯,研究员 

2012/11-2019/10 华体汇视讯,副研究员 

2012/07-2012/10华体汇视讯,助理研究员 

2007/09-2012.06,中国科学院大学,微电子学与固体电子学专业,博士学位 

2002/09-2006/07,西安理工大学,电子科学与技术专业,学士学位 

主要研究领域及成就: 

主要从事CMOS器件辐射效应研究,研究成果已应用于本领域主要器件研制单位、工程单位、科研单位,为CMOS器件设计及评估提供了支撑。主持完成了国家自然科学基金等科研项目10余项;公开发表数据库收录论文80余篇,其中SCI/EI收录60余篇;授权发明专利2项。

主要荣誉: 

2021年度华体汇视讯维吾尔自治区科技进步一等奖(第一完成人) 

2015年度华体汇视讯维吾尔自治区科技进步一等奖(第九完成人) 

第八届中国电子学会优秀科技工作者 

代表性文章: 

[1] Jiangwei Cui*, Qiwen Zheng*, Yudong Li, et.al, Impact of High TID Irradiation on Stability of 65 nm SRAM Cells. IEEE Transactions on Nuclear Science, 2022, 69(5): 1044-1050, SCI 

[2] Qiwen Zheng*, Jiangwei Cui*, Xuefeng Yu, Yudong Li, Wu Lu, Chengfa He, Qi Guo. Measurement and Evaluation of the Within-Wafer TID Response Variability on BOX Layer of SOI Technology. IEEE Transactions on Nuclear Science, 2021, 68(10): 2516-2523, SCI 

[3] Qiwen Zheng*, Jiangwei Cui*, Xuefeng Yu, Yudong Li, Wu Lu, Chengfa He, Qi Guo. Impact of TID on Within-Wafer Variability of Radiation-Hardened SOI Wafers. IEEE Transactions on Nuclear Science, 2021, 68(7): 1423-1429, SCI 

[4] Xu Cui, Jiangwei Cui*, Qiwen Zheng*, Ying Wei, Yudong Li, Qi Guo. Bias Dependence of Total Ionizing Dose Effects in 22 nm Bulk nFinFETs. Radiation Effects and Defects in Solids, 2022, 177(3-4), on line, SCI 

[5] Jiangwei Cui, Xuefeng Yu, Diyuan Ren, Jian Lu, The Influence of Channel Size on Total Dose Irradiation and Hot-Carrier Effects of Sub-Micro NMOSFET, Acta Phys. Sin., 2012, 61(2): 026102, SCI 

[6] Jiangwei Cui, Xuefeng Yu, Diyuan Ren, Relationship between silicon-on-insulator kink and radiation effects, International Journal of Modern Physics E, 2011, 20(6): 1409-1417, SCI 

[7] Jiangwei Cui, Qiwen Zheng, Bingxu Ning, Xuefeng Yu, Kai Zhao, Ying Wei, Wu Lu, Chengfa He, Diyuan Ren, Fang Yu, Liewei Xu, Qi Guo, Hot-Carrier Effect on TID Irradiated Short-Channel UTTB FD-SOI n-MOSFETs, 2018, 2018 IEEE Radiation Effects Data Workshop (REDW), EI 

[8] Baoshun Wang, Jiangwei Cui*, Qi Guo, Qiwen Zheng, Ying Wei, Shanxue Xi, The influence of total ionizing dose on the hot carrier injection of 22 nm bulk nFinFET, Journal of Semiconductors, 2020, 41(12): 122102, EI 

[9] Jiangwei Cui, Qiwen Zheng, Xuefeng Yu, Zhongchao Cong, Hang Zhou, Qi Guo, Lin Wen, Ying Wei and Diyuan Ren, Hot-carrier effects on irradiated deep submicron NMOSFET, Journal of Semiconductors, 2014, 35(07): 56-59, EI 

[10] Jiangwei Cui, Yaoguo Xue, Xuefeng Yu, Diyuan Ren, Jian Lu, Xingyao Zhang, Total dose irradiation and hot-carrier effects of sub-micro NMOSFETs, Journal of Semiconductors, 2012, 33(1): 014006, EI 

代表性专利: 

[1] 崔江维,郑齐文,魏莹,孙静,余学峰,郭旗,陆妩,何承发,任迪远,一种总剂量辐照对PMOSFET负偏压温度不稳定性影响的试验方法,ZL201711329107.0 

[2] 郑齐文,崔江维,李小龙,魏莹,余学峰,李豫东,郭旗;一种电路级总剂量辐射效应仿真方法,ZL 202011125626.7 

[3] 郑齐文,崔江维,李小龙,魏莹,余学峰,李豫东,郭旗,一种总剂量效应与工艺波动耦合的电路仿真方法,ZL202011125363.X 

研究领域: 

微电子学与固体电子学 

研究领域:

 
华体汇视讯(科技)有限公司